Yole Développement Compound Semi
- High-power (> 100 mW), 532 nm-wavelength compact green laser module with high efficiency and high-speed modulation capability
- AXT announces arrangement for the establishment of a second manufacturing facility in China
- Soitec and Sumitomo Electric announce major milestone in strategic joint development of engineered gallium nitride substrates
- International SiC Power Electronics Applications Workshop - from May 29 to 30, 2012 Stockholm, Sweden
- USCi. to develop next generation SiC devices with AIXTRON SiC Planetary Reactor® technology
- Albemarle introduces Electronic Materials business unit
- Alpha and Omega semiconductor demonstrates breakthrough 1200V UniSiC stack-cascode MOSFETs
- GaN nanowires show more 3D piezoelectricity than bulk GaN
- International SiC Power Electronics Applications Workshop from May 29 to 30, 2012
- Cree licenses key Doherty amplifier patents to RFHIC
Promise seen for applications in life sciences, precise measurements for industry and ultra-compact projectors.
AXT, Inc. (NASDAQ: AXTI), a leading manufacturer of compound semiconductor substrates, announced that it has agreed with the Administrative Commission of Tianjin Economy and Technology Development Zone to establish a second manufacturing facility in Tianjin, China.
Successful Demonstration of 4- and 6-inch GaN Engineered Substrates Leading to the Installation of Pilot Production Lines.
The Swedish SiC Power Center and Yole Développement announce their collaboration for the 2nd time
United Silicon Carbide Inc. (USCi), based in Monmouth Junction, NJ, USA, is developing the next generation of SiC devices utilizing the AIXTRON VP2400 Hot-Wall CVD tool.
Albemarle Corporation (NYSE: ALB) has officially announced the formation of its Electronic Materials business unit.
Ultra-high performance 1200V MOSFETs far superior to Si IGBTs and Superjunction MOSFETs.
A research team from the Northwestern University has released the details of a study that reveals individual gallium nitride (GaN) nanowires showing strong piezoelectric effect in 3D.
The Swedish SiC Power Center, Enterprise Europe Network and Yole Développement are glad to announce for the 2nd time, their collaboration on the workshop International SiC Power Electronics Applications (ISiCPEAW 2012). It is a two day event on the latest results and innovations on the use of Silicon Carbide technology in power electronics applications.
Designed to Accelerate Telecommunications Infrastructure Innovations.
Yole Développement Photonics
- Modulight revenue up 10% in 2011
- Fraunhofer fabs optoelectronic LDPD on CMOS image sensors for low light
- Newport to buy photonics test tool maker
- Carl Zeiss reports increased revenue, earnings
- First electronic optical fibres with hydrogenated amorphous silicon developed by an international team of scientists in the United States and the United Kingdom
- Austriamicrosystems supplies smartphone sensors
- Infra-red company L-3 buying Kollmorgen Electro-Optical for $210M
- Raytheon awarded $13M for thermal imagers
- Reconfigurable photonic chip realized by University of Bristol
- 3S Photonics optical components and modules
Revenue for 2011 was up 10 percent over 2010 for laser manufacturer Modulight Inc., president and CEO Petteri Uusimaa reported in the companys year-end newsletter.
Fraunhofer Institute for Microelectronic Circuits and Systems IMS researchers developed a new optoelectronic component for low-light CMOS image sensor applications.
Newport Corporation (NASDAQ:NEWP) began an acquisition of ILX Lightwave Corporation, which makes high-performance test and measurement products for laser diodes and other photonics components
Carl Zeiss posted significant increases in revenue and earnings for the fiscal year 2010-11 ending Sept. 30, 2011 over the prior year.
A new chemical technique for depositing a non-crystalline form of silicon into the long, ultra-thin pores of optical fibres has been developed by an international team of scientists in the United States and the United Kingdom.
Austriamicrosystems is supplying high volumes of intelligent ambient light and proximity sensors for four Samsung Galaxy models.
L-3 Communications announced it is broadening its base in the electro-optical/infrared (EO/IR) market by acquiring the Kollmorgen Electro-Optical unit of Danaher Corp. for $210 million in cash.
Raytheon Co. of Waltham, Mass., has been awarded $13.4 million by DARPA to develop a manufacturing process that will make thermal imagers more affordable and thus accessible to every military combatant.
A versatile optical chip that produces, measures and controls two important quantum phenomena mixture and entanglement has been developed, representing an important step toward developing quantum computers.
3S Photonics designs, manufactures, and markets high-reliability active and passive optical components and modules for the telecom, sensing, and laser markets. The company is also focusing on the development of ultra-reliable fiberoptic systems such as high-power fused components, optical sensors, and fiber laser components.
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